| Autor: |
David Hongfei Lu, Takashi Matsumoto, Yoichi Nabetani, Hiroki Wakimoto, Haruo Nakazawa |
| Rok vydání: |
2018 |
| Předmět: |
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| Zdroj: |
2018 International Power Electronics Conference (IPEC-Niigata 2018 -ECCE Asia). |
| DOI: |
10.23919/ipec.2018.8507718 |
| Popis: |
In this study, we developed a 700-V reverse- blocking insulated gate bipolar transistor (RB-IGBT), which is suitable for a large-capacity advanced T-type neutral- point-clamped (AT-NPC) three-level power conversion system. As this device can tolerate a larger turn-off surge voltage than the existing 600-V device, the turn-off speed can be higher and the turn-off loss can be reduced by 30%. Improving the p+ collector activation method reduces the reverse leakage current and increases the device operation temperature by 25 °C. When the 700-V devices are applied to the bidirectional switches of the rectifier stage of the AT-NPC system, the total loss of the bidirectional switch can be reduced by 10% compared with the application to 600-V devices. We have developed a power semiconductor module product mounting the 700-V RB-IGBTs for the bidirectional switches. The modules are installed in the large-capacity uninterrupted power supply machine "7300WX-T3U," achieving a high conversion efficiency of 97.5%. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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