Advanced semiconductor on insulator substrates for LP and HP digital CMOS applications
| Autor: | Carlos Mazure, I. Cayrefourcq, George K. Celler, Bich-Yen Nguyen, P. Patruno |
|---|---|
| Rok vydání: | 2007 |
| Předmět: |
Electron mobility
Materials science business.industry Transistor Electrical engineering Silicon on insulator Hardware_PERFORMANCEANDRELIABILITY Semiconductor device Integrated circuit law.invention CMOS Hardware_GENERAL law Low-power electronics Hardware_INTEGRATEDCIRCUITS business Hardware_LOGICDESIGN Leakage (electronics) |
| Zdroj: | 2007 International Semiconductor Device Research Symposium. |
| DOI: | 10.1109/isdrs.2007.4422440 |
| Popis: | To meet HP and LP circuit requirements, increasing channel mobility is required to boost transistor performance and/or reduce Vdd for lower power dissipation without performance penalty. The ultra-thin body (UTB) devices with undoped and strained channels can be used to control the SCE and reduce the sub-threshold leakage for scaling and low power dissipation. Implementing strained-silicon is not just a substrate change; strained- Si will require much more extensive work as transistor scaling continues. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|