Pattern Transfer Process Using Spun-on Carbon Film for KrF and ArF Lithography

Autor:	Yasuhiko Sato, Yasunobu Onishi, Tokuhisa Ohiwa, Takayo Hachiya, Tsuyoshi Shibata, Mayumi Kasai, Hisataka Hayashi, Eishi Shiobara, Kentaro Matsunaga, Junko Abe
Rok vydání:	2001
Předmět:	Materials science Polymers and Plastics business.industry Organic Chemistry chemistry.chemical_element Substrate (electronics) law.invention Optics Anti-reflective coating Carbon film chemistry Resist law Materials Chemistry Optoelectronics Dry etching business Carbon Lithography Refractive index
Zdroj:	Journal of Photopolymer Science and Technology. 14:439-443
ISSN:	1349-6336 0914-9244
Popis:	Dry etch resistance and antireflective performance were studied for a spun-on carbon film containing 90.4wt% of carbon. The refractive index of the spun-on carbon film at KrF wavelength (248nm) is n=2.17, k=0.37 and that at ArF wavelength (193nm) is n=1.44, k=0.39. The bilayer BARC system composed of upper spun-on glass (SOG) and lower spun-on carbon was evaluated. It reduces the reflectivity to 1% for KrF wavelength and 0.5% for ArF wavelength and the variation of the substrate thickness can be ignored. Resist profiles are obtained without any footing, residue, or standing-wave. The etch resistance of the spun-on carbon film is 1.3 times greater than that of the thermally oxidized novolak film (i.e., conventional under-layer for trilayer resist process).
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6aa22e0ecdd1565d80225f3ae39b7079 https://doi.org/10.2494/photopolymer.14.439 Zobrazit plný text záznamu