Practical interpretation of X-ray rocking curves from semiconductor heteroepitaxial layers
| Autor: | M. A. G. Halliwell |
|---|---|
| Rok vydání: | 1994 |
| Předmět: |
Physics and Astronomy (miscellaneous)
Condensed matter physics Chemistry business.industry General Engineering Crystal growth General Chemistry Crystal structure Dynamic simulation symbols.namesake Fourier transform Semiconductor Optics symbols Relaxation (physics) General Materials Science Thin film business Layer (electronics) |
| Zdroj: | Applied Physics A Solids and Surfaces. 58:135-140 |
| ISSN: | 1432-0630 0721-7250 |
| DOI: | 10.1007/bf00324368 |
| Popis: | X-ray rocking curves are widely used to study semiconductor heteroepitaxial structures. Examples are given of the use of rocking curves to investigate crystal growth problems, determine layer growth rates, confirm layer thicknesses and to determine the state of relaxation in layers which are above the critical thickness. The application of dynamic simulation and Fourier transformation to the raw data as tools to interpret data from multilayer structures is discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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