Thickness-dependent electron accumulation in InAs thin films onGaAs(111)A: A scanning-tunneling-spectroscopy study

Autor:	R. A. Stradling, B.A. Joyce, Hiroshi Yamaguchi, J. L. Sudijono, C. Gatzke, Tim Jones
Rok vydání:	1998
Předmět:	Thickness dependent Condensed Matter::Materials Science Materials science Condensed matter physics Band gap Scanning tunneling spectroscopy Heterojunction Electronic structure Electron Thin film Dislocation Condensed Matter::Mesoscopic Systems and Quantum Hall Effect
Zdroj:	Physical Review B. 58:R4219-R4222
ISSN:	1095-3795 0163-1829
DOI:	10.1103/physrevb.58.r4219
Popis:	Scanning tunneling spectroscopy has been used to study quantum size effects on the electronic structure of thin InAs films grown on $\mathrm{GaAs}(111)A$ substrates, an example of a heterostructure with a relatively large lattice mismatch. The band gap of the InAs films, as measured from current-voltage curves, decreases gradually with film thickness, and electron accumulation occurs in layers that are thicker than 6 nm. Self-consistent calculations suggest the thickness-dependent accumulation is due to quantum size effects and Fermi-level pinning caused by the dislocation network at the InAs/GaAs interface.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6a89a3023e193cd6d0c9917d4bc79664 https://doi.org/10.1103/physrevb.58.r4219 Zobrazit plný text záznamu