Interface phonons in short-period GaAs/AlAs superlattices: Wave vector-selective and defect-activated
| Autor: | Manuel Cardona, H.D. Fuchs, Arthur C. Gossard, D. J. Mowbray, S.A. Chalmers |
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| Rok vydání: | 1991 |
| Předmět: |
Condensed Matter::Quantum Gases
chemistry.chemical_classification Materials science Condensed matter physics Phonon Superlattice General Chemistry Gaas alas Condensed Matter::Mesoscopic Systems and Quantum Hall Effect Condensed Matter Physics Photoexcitation Condensed Matter::Materials Science symbols.namesake chemistry Materials Chemistry symbols Wave vector Raman spectroscopy Inorganic compound Raman scattering |
| Zdroj: | Solid State Communications. 79:223-226 |
| ISSN: | 0038-1098 |
| Popis: | Defect-activated interface modes with a large range of possible wave vectors in the superlattice planes, as well as interface modes with a well-defined in-plane wave vector, induced by a titled 80A-period GaAs/AlAs superlattice on the surface of a (GaAs) 7 (AlAs) 21 superlattice, have been observed using Raman spectroscopy. The experimentally measured frequencies are found to be in good agreement with calculations based on the macroscopic electrostatic continuum model. The efficiency of the Raman scattering by these interface phonons depends on the incident laser intensity, with high photoexcitation quenching them. |
| Databáze: | OpenAIRE |
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