Wetting behavior of plasma treated low-k films in dHF cleans solutions
| Autor: | T. S. Smith, Maria Baikousi, Konstantinos Dimos, O. Okobiah, Antonios Kouloumpis, M. Bischof, E. Osei-Yiadom, K. M. Lynch, Richard F. Reidy, C. M. Cooper |
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| Rok vydání: | 2014 |
| Předmět: |
Steady state
Chemistry Evaporation Analytical chemistry Condensed Matter Physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Contact angle Volume (thermodynamics) Wetting transition Ellipsometry Wetting Electrical and Electronic Engineering Porosity |
| Zdroj: | Microelectronic Engineering. 128:79-84 |
| ISSN: | 0167-9317 |
| Popis: | Post-ash and post-etch cleaning of low-k structures require significant wetting of their surfaces. This work focuses on the interactions between dilute HF cleaning chemistries (dHF-1:50 to 1:1000) on porous low-k surfaces (k=2.3) as a function of time. Wetting of these solutions was measured by a contact angle goniometer within a high humidity environment. Because ashing low-k films can change their surface chemistry and structure, the contact angles of dHF on N"2/H"2 and O"2 ashed porous low-k films were measured as well. Ellipsometry has shown that 1:50 HF removes an ash-damaged layer from the low-k. Based on thickness loss measurements (ellipsometry and profilometry), the composition of the dilute HF droplet changes minimally as it etches the dielectric surface. Under more concentrated dHF solutions, changes in contact angle, droplet radius, and volume indicate that the droplet spreads for an initial period and then reaches a steady state, perhaps due to the creation of an etch inclusion on the surface. The steady state volume changes show volume loss rates similar to those expected from evaporation; however, the total volume losses are less than expected from only evaporative processes. |
| Databáze: | OpenAIRE |
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