| Autor: |
J. Mendonca, B. Steimle, Tom Remmel, M. Tarabbia, M. Kim, Melvy F. Miller, P. Alluri, Rashaunda Henderson, S. Straub, Peter Zurcher, Doug Roberts, T. Sparks, H. Thibieroz, C. Happ, A. Duvallet, Peir Chu, Mark V. Raymond, M. Petras, J. Stipanuk |
| Rok vydání: |
2002 |
| Předmět: |
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| Zdroj: |
International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No.00CH37138). |
| DOI: |
10.1109/iedm.2000.904281 |
| Popis: |
High precision metal-insulator-metal capacitors with a capacitance density of 1.6 fF/um/sup 2/ and metal thin film resistors of 50 ohm/sq. sheet resistance and a negative temperature coefficient of resistivity smaller than 100 ppm//spl deg/C have been integrated in a dual-inlaid Cu-based backend for mixed-signal applications. These devices deliver reduced parasitics, better linearity, lower temperature coefficients, lower noise, and better matching as compared to current silicon based devices. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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