Effects of gas ring position and mesh introduction on film quality and thickness uniformity

Autor:	Seungbum Hong, Sang-Gyun Woo, Kwangsoo No, Zhong-Tao Jiang, Eunah Kim, Young-Bum Koh, Byeong-Soo Bae, Sung-Chul Lim
Rok vydání:	1997
Předmět:	Materials science Scattering Mechanical Engineering Plasma Condensed Matter Physics Ring (chemistry) Planar Mechanics of Materials Sputtering Getter Deposition (phase transition) General Materials Science Wafer Composite material
Zdroj:	Materials Science and Engineering: B. 45:98-101
ISSN:	0921-5107
DOI:	10.1016/s0921-5107(96)01913-7
Popis:	Chromium oxide films were deposited using DC reactive magnetron sputtering system with different gas ring positions. It was found that the film quality was improved, while film thickness deviation over 2′' area of silica wafer increased, as the distance between the target and the gas ring increased. To improve both the film quality and the thickness uniformity, a method of mesh insertion was tried and verified to meet the purpose. Introduction of mesh produced stable plasma and resulted in more uniform and smooth planar film without any contamination from the mesh. These phenomena were explained in terms of gettering and scattering effects of the mesh.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6a3a782935b6cb864dd8544b2f9255f7 https://doi.org/10.1016/s0921-5107(96)01913-7 Zobrazit plný text záznamu Full Text from ScienceDirect