Structural and electrical properties of Li-doped ZnO films
| Autor: | Jae-Gil Lee, Su-Keun Eom, Jun-Seok Jeong, Dong-Hwan Kim, Kwang-Seok Seo, Ho-Young Cha |
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| Rok vydání: | 2017 |
| Předmět: |
010302 applied physics
Photoluminescence Materials science business.industry Doping General Physics and Astronomy 02 engineering and technology High-electron-mobility transistor 021001 nanoscience & nanotechnology 01 natural sciences Buffer (optical fiber) Secondary ion mass spectrometry 0103 physical sciences Optoelectronics Radio frequency 0210 nano-technology business Layer (electronics) Microwave |
| Zdroj: | Journal of the Korean Physical Society. 71:697-700 |
| ISSN: | 1976-8524 0374-4884 |
| Popis: | In this study, we investigated the effects of highly doped carbon (C) buffer on the microwave performance of AlGaN/GaN-on-Si high electron mobility transistor (HEMT).We fabricated AlGaN/GaN-on-Si HEMTs with two different buffer structures. One structure had an un-doped buffer layer and the other structure had C-doped buffer layer with the doping concentration of ~1 × 1019 cm −3 with GaN channel thickness of 350 nm. Despite higher leakage current, the device fabricated on the un-doped buffer structure exhibited better transfer and current collapse characteristics which, in turn, resulted in superior small-signal characteristics and radio frequency (RF) output power. Photoluminescence and secondary ion mass spectrometry measurements were carried out to investigate the effects of the highly-doped C buffer on microwave characteristics. |
| Databáze: | OpenAIRE |
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