Integrated Condition Monitoring by Measuring the Delay of Gate Turn-off
| Autor: | Frederic Sehr, Stefan Trampert, Felix Wuest, Klaus-Dieter Lang |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
business.industry Computer science 020208 electrical & electronic engineering Bipolar junction transistor Electrical engineering Condition monitoring 02 engineering and technology Insulated-gate bipolar transistor 01 natural sciences Power (physics) Reliability (semiconductor) 0103 physical sciences Hardware_INTEGRATEDCIRCUITS 0202 electrical engineering electronic engineering information engineering Gate driver Energy transformation Electronics business |
| Zdroj: | 2019 22nd European Microelectronics and Packaging Conference & Exhibition (EMPC). |
| DOI: | 10.23919/empc44848.2019.8951809 |
| Popis: | Since renewable energies are becoming increasingly important in today’s energy supply, improving the reliability of components in the energy conversion chain, namely power inverters, is becoming a major field of interest in current research. Reliability issues of these power inverters have been discussed thoroughly in previous research. An in-depth exploration of condition monitoring on their insulated gate bipolar transistors (IGBTs) is, however, still outstanding. To predict age-related failures it is necessary to implement condition monitoring into the inverters. Therefore an integrated condition monitoring system for IGBT power electronic devices is developed. The chip’s junction temperatures are derived from measuring the miller plateau duration during turn-off. A circuit is integrated into the gate driver board for easy acquisition. |
| Databáze: | OpenAIRE |
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