The effect of vacuum annealing on the microstructure, mechanical and electrical properties of tantalum films
| Autor: | A. Javed, C. Zhu, Hina G. Durrani |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) Metallurgy Tantalum Analytical chemistry chemistry.chemical_element 02 engineering and technology Crystal structure 021001 nanoscience & nanotechnology Microstructure 01 natural sciences Grain size chemistry Sputtering Electrical resistivity and conductivity 0103 physical sciences Thin film 0210 nano-technology |
| Zdroj: | International Journal of Refractory Metals and Hard Materials. 54:154-158 |
| ISSN: | 0263-4368 |
| DOI: | 10.1016/j.ijrmhm.2015.07.003 |
| Popis: | The microstructure, mechanical and electrical properties of vacuum annealed tantalum films were studied. X-ray diffraction spectra confirmed the presence of mixed ( α and β ) phases in the as-deposited Ta films. After vacuum annealing (at 750 °C for 1 h), the metastable β -phase was completely transformed to stable α -phase. The grain size increased (from 35 ± 3 nm to 92 ± 3 nm) with the increase in annealing temperature. The mixed ( α and β ) phases resulted in higher hardness and higher Young's modulus. The film annealed at 750 °C for 1 h exhibited lower resistivity (52 ± 4 μΩ-cm), lower hardness ( H = 10.4 ± 1.3 GPa) and lower Young's modulus ( Y = 185 ± 5 GPa) as compared to the as-deposited and annealed (at temperature β to α at an annealing temperature of 750 °C. |
| Databáze: | OpenAIRE |
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