Model for determining the density and mobility of carriers in thin semiconducting layers with only two contacts

Autor:	Jeremiah R. Lowney
Rok vydání:	1995
Předmět:	Electron mobility Source code Materials science Magnetoresistance business.industry media_common.quotation_subject General Physics and Astronomy Function (mathematics) Sample (graphics) Magnetic field Quality (physics) Optoelectronics business Layer (electronics) media_common
Zdroj:	Journal of Applied Physics. 78:1008-1012
ISSN:	1089-7550 0021-8979
DOI:	10.1063/1.360770
Popis:	A new method for determining the carrier densities and mobilities in a thin semiconducting layer was recently described. It is based on fitting the transverse magnetoresistance of the layers as a function of magnetic field, and it requires only two contacts. To improve the accuracy and generalize the procedure to multicarrier systems, a computer code was written to solve for the magnetoresistance as a function of magnetic field and the length‐to‐width ratio of a rectangular sample. A nonlinear‐least‐squares fit was made to the results of the computer model for a single‐carrier system. The results for multicarrier systems are discussed. This method is especially useful as a monitor for improving the quality control of the electrical characteristics of thin conducting layers in finished devices. The code is also useful for interpreting standard four‐terminal measurements as well.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6a25c8b9cb8621eba9eaa2faac652b2f https://doi.org/10.1063/1.360770 Zobrazit plný text záznamu