Resolution of calixarene resist under low energy electron irradiation
| Autor: | S. Matsui, Eiichi Nomura, Yukinori Ochiai, Shoko Manako, Jun-ichi Fujita, Y. Ohnishi |
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| Rok vydání: | 1998 |
| Předmět: |
Chemistry
business.industry Monte Carlo method Resolution (electron density) Condensed Matter Physics Molecular physics Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Low energy Optics Resist Calixarene Cathode ray Electron beam processing Electrical and Electronic Engineering business Electron-beam lithography |
| Zdroj: | Microelectronic Engineering. :323-326 |
| ISSN: | 0167-9317 |
| Popis: | The resolution and sensitivity of calixarene resists in relation to incident electron energy were studied. While the sensitivity of the resists was varied in compliance with Bethe theory for the changes of the electron energy, resolution of the resists in terms of the minimum dot size, shows almost the same value of about 10 nm for each electron energy. A Monte Carlo simulation suggests the electron dose at the edge of the dot pattern was only one hundredth of that at the center of the electron beam. This means the major factor in limiting the resolution in calixarene resists was not the electron beam. This means the major factor in limiting the resolution in calixarene resists was not the electron beam profile, but other factors such as a limit due to development processes. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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