Anisotropic polarization of dislocation-related luminescence in thin ZnSe films
| Autor: | L. Worschech, J. Schreiber, Y.G. Shreter, Andreas Waag, Y.T. Rebane, W. Ossau, U. Hilpert, G. Landwehr |
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| Rok vydání: | 1999 |
| Předmět: |
Materials science
Condensed matter physics business.industry Exciton Condensed Matter Physics Polarization (waves) Electronic Optical and Magnetic Materials Optics Partial dislocations Electrical and Electronic Engineering Dislocation Anisotropy Luminescence business Stacking fault Molecular beam epitaxy |
| Zdroj: | Physica B: Condensed Matter. :895-897 |
| ISSN: | 0921-4526 |
| DOI: | 10.1016/s0921-4526(99)00548-7 |
| Popis: | We have investigated the strong anisotropic polarization of the prominent Y line luminescence at 2.62 eV in thin ZnSe layers grown by molecular beam epitaxy on (0 0 1) -oriented GaAs substrates. For thin ZnSe films a pronounced anisotropic polarization collinearly to the [ 1 1 0] crystallographic direction with intensity ratios up to 1 : 8 for polarizer orientations parallel and perpendicular to [1 1 0] is found. In this samples the matrix luminescence shows no preferential orientation of the electric field vector in the plane perpendicular to the axis of growth. For ZnSe films with a layer thickness just below the critical thickness we observed a fine structure of up to nine subcomponents in the Y line spectrum. We interpret the Y line as a radiative recombination of an exciton bound to a 60° α-dislocation, which is dissociated into a 90° and 30° Shockley partial dislocation bounding a stacking fault ribbon. We relate the fine structure to a discrete set of the stacking fault distances. |
| Databáze: | OpenAIRE |
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