Effective cross section for photoluminescence excitation and lifetime of excited Er3+ ions in selectively doped multilayer Si:Er structures
| Autor: | V. B. Shmagin, A. M. Emel’yanov, Boris A. Andreev, S. V. Gastev, Nikolai A. Sobolev, Z. F. Krasilnik |
|---|---|
| Rok vydání: | 2003 |
| Předmět: |
Materials science
Photoluminescence Silicon Doping Physics::Optics chemistry.chemical_element Condensed Matter Physics Atomic and Molecular Physics and Optics Electronic Optical and Magnetic Materials Ion Condensed Matter::Materials Science chemistry Excited state Photoluminescence excitation Atomic physics Excitation Molecular beam epitaxy |
| Zdroj: | Semiconductors. 37:1100-1103 |
| ISSN: | 1090-6479 1063-7826 |
| DOI: | 10.1134/1.1610127 |
| Popis: | The effective cross section for photoluminescence (PL) excitation and lifetime of erbium ions in an excited state have been determined in Si:Er/Si/Si:Er/Si.../Si structures fabricated by sublimation molecular beam epitaxy. The obtained results show that a considerable enhancement of PL intensity from erbium ions in selectively doped silicon, compared with that doped uniformly, is not related to changes in the radiative lifetime, effective cross section for excitation, or lifetime of erbium ions in the excited state. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|