A novel high-frequency power FET structure fabricated using LPCVD WSi/sub 2/ gate and LCPVD W source contact technology
Autor: | K. Shenai, P.A. Piacente, Bantval Jayant Baliga, R. Saia, William Andrew Hennessy, C. S. Korman |
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Rok vydání: | 2003 |
Předmět: | |
Zdroj: | Technical Digest., International Electron Devices Meeting. |
DOI: | 10.1109/iedm.1988.32933 |
Popis: | A novel high-frequency power FET technology is reported that is based on the application of blanket-deposited LPCVD (low-pressure chemical vapor deposition) WSi/sub 2/ to reduce the gate sheet resistance and selectively deposited LPCVD W to improve the source and gate contact resistances. Power FETs capable of blocking 45 V and 90 V in the off-state have been fabricated using this technology, with unprecedented high-frequency performance and excellent wafer yield. These devices have the lowest specific-on-resistance-specific-input-capacitance product ever reported, with transient switching times of less than 7 ns and the capability of switching more than 500 A/cm/sup 2/. For the first time, power FETs with integral Schottky diodes are reported which have resulted in significant enhancement in the reverse recovery characteristics of the parasitic body p-n junction diode of a conventional power MOSFET. > |
Databáze: | OpenAIRE |
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