| Autor: |
Al F. Tasch, Kevin M. Klein, Steve Novak, Changhae Park, Dennis Kamenitsa, Robert B. Simonton |
| Rok vydání: |
1991 |
| Předmět: |
|
| Zdroj: |
Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. :159-163 |
| ISSN: |
0168-583X |
| DOI: |
10.1016/0168-583x(91)95198-m |
| Popis: |
The implanted impurity profile variation across a wafer due to an electrostatic scanning system has been studied for boron implants into (100) silicon wafers. The variation of the actual tilt and rotation angles across a wafer has been precisely determined for the implanter used in this study. The sensitivity of the impurity profiles to this angular variation has been studied through both a theoretical prediction based on an improved calculation of critical angles for channeling, and a qualitative analysis using the thermal wave measurement technique. A quantitative study of the profile variation across a wafer has also been performed using extensive secondary ion mass spectrometry (SIMS) profile measurements. For the energy range (15–80 keV) and angle range (0–10° tilt angle, 0–360° rotation angle) used in this study, we have identified the ranges of tilt and rotation angles that should be used for minimum channeling and minimum profile variation. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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