A 20-nm physical gate length NMOSFET featuring 1.2 nm gate oxide, shallow implanted source and drain and BF2 pockets
| Autor: | Christian Caillat, S. Biswas, G. Lecarval, B. Dal'zotto, G. Guegan, P. Mur, D. Souil, M.E. Nier, M. Heitzmann, François Martin, Simon Deleonibus, A.M. Papon, S. Tedesco |
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| Rok vydání: | 2000 |
| Předmět: |
Materials science
business.industry Gate length chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Dielectric thin films Electronic Optical and Magnetic Materials Ion implantation chemistry Gate oxide Etching (microfabrication) MOSFET Hardware_INTEGRATEDCIRCUITS Electronic engineering Optoelectronics Electrical and Electronic Engineering Reactive-ion etching business Arsenic |
| Zdroj: | IEEE Electron Device Letters. 21:173-175 |
| ISSN: | 1558-0563 0741-3106 |
| DOI: | 10.1109/55.830972 |
| Popis: | We have demonstrated the feasibility of 20-nm gate length NMOSFET's using a two-step hard-mask etching technique. The gate oxide is 1.2-nm thick. We have achieved devices with real N/sup -/ arsenic implanted extensions and BF/sub 2/ pockets. The devices operate reasonably well down to 20-nm physical gate length. These devices are the shortest devices ever reported using a conventional architecture. |
| Databáze: | OpenAIRE |
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