Evidence of Reduced Self Heating with Partially Depleted SOI MOSFET Scaling

Autor:	Georges Guegan, O. Gonnard, Simon Deleonibus, Mikael Casse, Gilles Gouget, Romain Gwoziecki, Christine Raynaud
Rok vydání:	2006
Předmět:	Materials science Silicon business.industry chemistry.chemical_element Silicon on insulator Power supply voltage Thermal conductivity chemistry MOSFET Microelectronics Optoelectronics business Self heating Scaling
Zdroj:	MRS Proceedings. 913
ISSN:	1946-4274 0272-9172
DOI:	10.1557/proc-0913-d03-02
Popis:	SOI technology offers advantages over bulk silicon and become a good candidate for analog/RF applications. However, the presence of a buried oxide causes self-heating which can degrade the device performance. The effects of self-heating have been examined on two successive generations with a wide range of device dimensions. This work shows that self-heating effects become less and less severe with both MOSFET and power supply voltage scaling. Moreover, we have observed a weak increase of 100 nm pMOSFET output characteristics due to the self-heating.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6a05019dbe47096addd4a689556b61aa https://doi.org/10.1557/proc-0913-d03-02 Zobrazit plný text záznamu Full text from SpringerLink