Development of Si neural probe with piezoresistive force sensor for minimally invasive and precise monitoring of insertion forces
Autor: | Takuya Harashima, Takafumi Fukushima, Takumi Morikawa, Tetsu Tanaka, Hisashi Kino |
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Rok vydání: | 2017 |
Předmět: |
010302 applied physics
Materials science Physics and Astronomy (miscellaneous) Stress sensor business.industry 0206 medical engineering General Engineering General Physics and Astronomy Nanotechnology Tetrode 02 engineering and technology Bending 020601 biomedical engineering 01 natural sciences Piezoresistive effect Force sensor Optical stimulation 0103 physical sciences Optoelectronics business |
Zdroj: | Japanese Journal of Applied Physics. 56:04CM04 |
ISSN: | 1347-4065 0021-4922 |
DOI: | 10.7567/jjap.56.04cm04 |
Popis: | A Si neural probe is one of the most important tools for neurophysiology and brain science because of its various functions such as optical stimulation and drug delivery. However, the Si neural probe is not robust compared with a metal tetrode, and could be broken by mechanical stress caused by insertion to the brain. Therefore, the Si neural probe becomes more useful if it has a stress sensor that can measure mechanical forces applied to the probe so as not to be broken. In this paper, we proposed and fabricated the Si neural probe with a piezoresistive force sensor for minimally invasive and precise monitoring of insertion forces. The fabricated piezoresistive force sensor accurately measured forces and successfully detected insertion events without buckling or bending in the shank of the Si neural probe. This Si neural probe with a piezoresistive force sensor has become one of the most versatile tools for neurophysiology and brain science. |
Databáze: | OpenAIRE |
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