Wide Band-Gap Silicon Based Layers for Heterojunction Solar Cells
| Autor: | Miao Yang, Yuanmin Li, Long Yongdeng, Lan Shihu, Chen Xiangang, Hongfan Wu, Xixiang Xu, Cao Yu |
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| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Amorphous silicon Materials science Silicon Passivation business.industry Wide-bandgap semiconductor chemistry.chemical_element Heterojunction 02 engineering and technology 021001 nanoscience & nanotechnology 01 natural sciences Amorphous solid chemistry.chemical_compound chemistry 0103 physical sciences Optoelectronics Crystalline silicon Thin film 0210 nano-technology business |
| Zdroj: | 2018 IEEE 7th World Conference on Photovoltaic Energy Conversion (WCPEC) (A Joint Conference of 45th IEEE PVSC, 28th PVSEC & 34th EU PVSEC). |
| Popis: | In amorphous/crystalline silicon heterojunction (SHJ) solar cells, optical losses can be reduced by replacing the amorphous silicon thin films with wide bandgap (WBG) amorphous silicon based thin layers, such as oxygen-alloyed amorphous silicon (a-SiO x :H), oxygen-alloyed nano-crystalline silicon ($\mu$c-SiO x :H), or carbon-alloyed amorphous silicon (a-SiCx:H) materials. In this paper, we applied hydrogen (H2) plasma treatment to the WBG layer deposition. The average short circuit current (JSC) of the SHJ solar cells with H2-treated passivation layers is increased by 0.24 mA/cm2 without open circuit voltage (VOC) or fill factor (FF) drop, suggesting that good interface passivation is maintained. Additionally, nano-crystalline oxygen-alloyed silicon ($\mu$c-SiO x :H) layer is deposited as window layer for further increase in JSC by more than 0.4 mA/cm2. |
| Databáze: | OpenAIRE |
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