Study of YBaCuO on W/Si by x‐ray photoelectron spectroscopy
| Autor: | A. R. Chourasia, Li Chen, A. Bensaoula, A. H. Bensaoula, D.R. Chopra |
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| Rok vydání: | 1992 |
| Předmět: |
Materials science
High-temperature superconductivity Silicon Analytical chemistry chemistry.chemical_element Surfaces and Interfaces Condensed Matter Physics Epitaxy Surfaces Coatings and Films law.invention Chemical state X-ray photoelectron spectroscopy chemistry law Sputtering Thin film Molecular beam epitaxy |
| Zdroj: | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films. 10:1547-1553 |
| ISSN: | 1520-8559 0734-2101 |
| DOI: | 10.1116/1.578043 |
| Popis: | With the advent of high temperature superconductors, attempts are made to integrate these materials with silicon so as to evaluate their potential in semiconductor technology. In order to investigate the reactivity between the superconductor and silicon through the different diffusion barriers, we have studied Y–Ba–Cu–O on W/Si samples subjected to different processing conditions by x‐ray photoelectron spectroscopy. Thin films of superconductors Y–Ba–Cu–O were deposited on W/Si by molecular‐beam epitaxy. The samples were then broken into two pieces. One piece was annealed at 860 °C for 3 h. We have studied the chemical reactivity of the superconductor with the substrate at the interface for both the annealed and unannealed samples. Such a comparative study minimizes problems inherent to sputtering. In particular, we have focused on Y 3d, Ba 3d, Cu 2p, O 1s, Si 2p, and W 4f regions. Emphasis was placed on the depth distribution, content and chemical state of the constituents as a function of different proc... |
| Databáze: | OpenAIRE |
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