| Autor: |
J. Dunn, Qizhi Liu, Ramana M. Malladi, Peter B. Gray, Ping-Chuan Wang, Kenneth J. Stein, Douglas B. Hershberger, R. Previti-Kelly, Panglijen Candra, Ephrem G. Gebreselasie, Benjamin T. Voegeli, K. Watson, Wade J. Hodge, Peter J. Lindgren, Zhong-Xiang He, Alvin J. Joseph |
| Rok vydání: |
2007 |
| Předmět: |
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| Zdroj: |
2007 IEEE Bipolar/BiCMOS Circuits and Technology Meeting. |
| ISSN: |
1088-9299 |
| DOI: |
10.1109/bipol.2007.4351868 |
| Popis: |
In this paper we introduce, a state-of-the-art SiGe BiCMOS power amplifier technology that features two NPNs with 40 GHz / 6.0 V & 27 GHz / 8.5 V (fT - BVceo) respectively, a novel low inductance metal ground through-silicon-via (TSV), integrated on a low-cost 0.35 μm lithography node with 3.3 V / 5.0 V dual-gate CMOS technology and high-quality passives on a 50 Ω.cm substrate. |
| Databáze: |
OpenAIRE |
| Externí odkaz: |
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