Electron cyclotron resonance etching of semiconductor structures studied by in-situ spectroscopic ellipsometry
| Autor: | William A. McGahan, Blaine D. Johs, John A. Woollam, Paul G. Snyder, Natale J. Ianno, S. Nafis |
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| Rok vydání: | 1993 |
| Předmět: |
Silicon
business.industry Chemistry Metals and Alloys Analytical chemistry chemistry.chemical_element Heterojunction Surfaces and Interfaces Substrate (electronics) Electron cyclotron resonance Surfaces Coatings and Films Electronic Optical and Magnetic Materials Semiconductor Ellipsometry Etching (microfabrication) Materials Chemistry Reactive-ion etching business |
| Zdroj: | Thin Solid Films. 233:253-255 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(93)90101-t |
| Popis: | The motivation for this work was to develop in-situ monitoring and control of electron cyclotron resonance (ECR) as an anisotropic etch doing minimal surface damage to electronic materials. We have used a modular rotating- analyzer spectroscopic ellipsometer in both the in-situ and ex-situ modes to investigate etching of Si, SiO2, GaAs and InP, as well as GaAs/Al1−xGaxAs/GaAs and InP/In1−xGaxAs heterostructures. Etching was done using a 175 W ECR source with mixtures of CCl2F2 and either oxygen or insert gases in various flow ratios in order to prevent polymerization. The experimental variables in these experiments were the gas ratios, gas species, r.f. substrate bias voltage (power) and substrate temperature. Etching was found to create a thin damage region near the surface modeled ellipsometrically as crystalline-plus-amorphous semiconductor in a Bruggeman effective-medium mixture. |
| Databáze: | OpenAIRE |
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