TCAD Study of THz Rectification Process in JLFET

Autor:	Michal Zaborowski, Ivan Mazzetta, Fabrizio Palma, Przemyslaw Zagrajek, Jacek Marczewski, Giammarco Di Tomassi
Rok vydání:	2021
Předmět:	Materials science Silicon Terahertz radiation business.industry Detector Process (computing) chemistry.chemical_element Radiation Rectification chemistry Optoelectronics business Gate capacitance Voltage
Zdroj:	2021 46th International Conference on Infrared, Millimeter and Terahertz Waves (IRMMW-THz).
DOI:	10.1109/irmmw-thz50926.2021.9567115
Popis:	The mechanisms of THz rectification performed by the JLFET detector are studied by TCAD simulations, in the light of the self-mixing model. Results show a new picture of the device functioning giving a new description of measured response. The achieved comprehension of the interaction of the radiation with the silicon structure, offers a new possible approach to detection through the gate capacitance charging, in addition to the standard drain voltage measurement.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::69e230b23bfe901518c18c1403a1e999 https://doi.org/10.1109/irmmw-thz50926.2021.9567115 Zobrazit plný text záznamu