Introducing the 1H-Na2S monolayer as a new direct gap semiconductor with feature-rich electronic and magnetic properties

Autor:	Duy Khanh Nguyen, J. Guerrero-Sanchez, D. M. Hoat
Rok vydání:	2022
Předmět:	General Physics and Astronomy Physical and Theoretical Chemistry
Zdroj:	Physical Chemistry Chemical Physics. 24:27505-27514
ISSN:	1463-9084 1463-9076
DOI:	10.1039/d2cp04613j
Popis:	(a) Planar average potential (inset: Bader charge analysis) and (b) electronic localization function (iso-surface value: 0.85) of the Na2S monolayer.
Databáze:	OpenAIRE
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