Improvement of performances HfO 2 -based RRAM from elementary cell to 16 kb demonstrator by introduction of thin layer of Al 2 O 3
| Autor: | A. Benoist, S. Bernasconi, G. Audoit, C. Guedj, Philippe Candelier, C. Fenouillet-Beranger, T. Dewolf, L. Perniola, E. Jalaguier, S. Jeannot, C. Charpin, Stephane Denorme, E. Vianello, M. Azzaz, Daniele Garbin, C. Cagli |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Stack-based memory allocation Materials science Equivalent series resistance business.industry Bilayer chemistry.chemical_element Nanotechnology 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Electronic Optical and Magnetic Materials Resistive random-access memory chemistry CMOS 0103 physical sciences Materials Chemistry Optoelectronics Electrical and Electronic Engineering 0210 nano-technology Tin business Layer (electronics) Quantum tunnelling |
| Zdroj: | Solid-State Electronics. 125:182-188 |
| ISSN: | 0038-1101 |
| Popis: | In this article, the reliability of HfO2-based RRAM devices integrated in an advanced 28 nm CMOS 16 kbit demonstrator is presented. In order to improve the memory performance, a thin Al2O3 layer is inserted in the HfO2-based memory stack (TiN/Ti/HfO2/Al2O3/TiN). Thanks to extensive electrical characterizations on both single layer HfO2 and bilayer HfO2/Al2O3 memory stacks at device and array levels, the potential of the bilayer is put forward. From the experimental results, the thin Al2O3 layer has allowed to improve the endurance (memory window of about one decade after 1 M cycles) and data retention (both the low and the high resistance states are stable after 6 h at 200 °C). Finally, thanks to our 3D model based on calculation of the Conductive Filament resistance using trap assisted tunneling (TAT) the role of Al2O3 as series resistance is highlighted. |
| Databáze: | OpenAIRE |
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