Photoelectrochemical Properties of CH3-Terminated p-Type GaP(111)A
| Autor: | Elizabeth S. Brown, Stephen Maldonado, Sabrina L. Peczonczyk, Zhijie Wang |
|---|---|
| Rok vydání: | 2014 |
| Předmět: |
Photocurrent
Materials science Grignard reaction Trapping Photochemistry Surfaces Coatings and Films Electronic Optical and Magnetic Materials Dielectric spectroscopy chemistry.chemical_compound General Energy chemistry Electrode Gallium phosphide Charge carrier Physical and Theoretical Chemistry Surface states |
| Zdroj: | The Journal of Physical Chemistry C. 118:11593-11600 |
| ISSN: | 1932-7455 1932-7447 |
| DOI: | 10.1021/jp503147p |
| Popis: | The photoelectrochemical properties of p-type gallium phosphide (GaP) (111)A electrodes before and after a two-step chlorination/Grignard reaction sequence have been assessed. Electrochemical impedance spectroscopy indicated both a change in the flat-band potential in water and decreased sensitivity of the band edge energetics toward pH for GaP(111)A surfaces following modification. Separate stability tests were performed to gauge the susceptibilities of unmodified and CH3-terminated p-GaP(111)A photoelectrodes toward reductive degradation under illumination. The steady-state photoelectrochemical results showed modification of GaP(111)A with −CH3 groups significantly enhanced p-GaP stability. Separately, sub-bandgap photocurrent measurements were collected to assess relative changes in surface states acting as recombination centers. In the absence of any dye, the sub-bandgap photocurrent from trapping/detrapping of charge carriers in surface states was higher for unmodified p-GaP photoelectrodes than for ... |
| Databáze: | OpenAIRE |
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