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A two-stage Gallium Arsenide (GaAs) monolithic power amplifier has been developed. The main features of the amplifier are the coverage of two distinct frequency bands, X-band and Ku-band; high power output of 800 mW at 2 dB compression at 85 C, and high efficiency, 14 to 20 percent at 85 C. The circuit includes on-chip biasing accessible from both sides of the circuit and is stable under any combination of input/output loads attainable with standard tuners. The amplifier measures 0.109 by 0.120 in. and was fabricated with standard ion-implanted, 0.5 micron gate length MESFETs.© (1991) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only. |
