Study of Point Defects in Silicon by Means of Positron Annihilation with Core Electrons

Autor:	T. van Hoecke, Charles Dauwe, Danny Segers, B. Van Waeyenberge, Alvaro Morales, Mojmír Šob, J.R. Richardson, M.-A. Trauwaert, Jan Kuriplach, N. Balcaen
Rok vydání:	1997
Předmět:	Materials science Photon Annihilation Silicon Mechanical Engineering Positron Lifetime Spectroscopy chemistry.chemical_element 02 engineering and technology Electron 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Positron annihilation spectroscopy Condensed Matter::Materials Science chemistry Core electron Mechanics of Materials 0103 physical sciences Annihilation radiation Physics::Atomic and Molecular Clusters General Materials Science Atomic physics 010306 general physics 0210 nano-technology
Zdroj:	Materials Science Forum. :605-607
ISSN:	1662-9752
DOI:	10.4028/www.scientific.net/msf.255-257.605
Popis:	High momentum parts of the momentum distribution of annihilation photons are examined both theoretically and experimentally for vacancies and vacancy-oxygen complexes in Si, Atomic relaxations in the neighbourhood of the defects are taken into account, Theoretical calculations are compared with measurements performed on undefected and electron irradiated Czochralski grown and float-zone Si samples.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::69ba78fda92c129ba06c9e5a0fbe4837 https://doi.org/10.4028/www.scientific.net/msf.255-257.605 Zobrazit plný text záznamu