Determination of Electrophysical Parameters of a Semiconductor from Measurements of the Microwave Spectrum of Coaxial Probe Impedance

Autor:	A. N. Reznik, N. K. Vdovicheva
Rok vydání:	2019
Předmět:	010302 applied physics Materials science Physics and Astronomy (miscellaneous) business.industry Conductivity Inverse problem 01 natural sciences 010305 fluids & plasmas Computational physics Micrometre Semiconductor 0103 physical sciences Charge carrier Antenna (radio) business Electrical impedance Microwave
Zdroj:	Technical Physics. 64:1722-1727
ISSN:	1090-6525 1063-7842
DOI:	10.1134/s1063784219110240
Popis:	We propose a method for determining electrophysical characteristics (free charge carrier concentration, mobility, and conductivity) of semiconductors from the results of measurements of the microwave spectrum of the impedance of a coaxial probe as a function of applied constant voltage U. The sought parameters have been determined by solving the corresponding inverse problem using the theory of a near-field antenna that was developed earlier. We have developed a computer program that seeks the solution by minimization of the multiparametric residual function in accordance with the Nelder–Mead algorithm. The precision of the method has been analyzed from the results of simulation in which the impedance was calculated preliminarily considering resultant concentration profile n(x, U) of the depleted layer in the vicinity of the metal–semiconductor contact. The possibility of diagnostics with a micrometer lateral resolution has been demonstrated.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::69b0e2c8e10b45a950c23c029ded24b7 https://doi.org/10.1134/s1063784219110240 Zobrazit plný text záznamu Plný text ve formátu PDF Plný text ve formátu HTML
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