Channel Strain Characterization in Embedded SiGe by Nano-beam Diffraction

Autor:	Nivo Rovedo, Judson R. Holt, Sunfei Fang, Mark Lagus, Lynne Gignac, Angela Lamberti, Dominic J. Schepis, Anthony G. Domenicucci, Zhijiong Luo, Jinghong Li, Anita Madan, Henry K. Utomo, Jin-Ping Han, Chung Woh Lai, Ja-Hum Ku, Hung Ng
Rok vydání:	2008
Předmět:	Diffraction Materials science Strain (chemistry) business.industry Nano Optoelectronics business Beam (structure) Communication channel Characterization (materials science)
Zdroj:	ECS Transactions. 16:545-549
ISSN:	1938-6737 1938-5862
Popis:	Nano-beam diffraction (NBD) has been successfully used in measuring channel strain in device of embedded SiGe (eSiGe). Strain measurements have been correlated to different processing conditions and microstructures of eSiGe and device performance. For intrinsic eSiGe without growth defect with 15-17%Ge, the average channel strain measured by NBD is ~ -0.55%, consistent with our previous measurement by convergent electron beam diffraction (CBED) and TCAD simulation. For graded eSiGe with average ~22%Ge, the average channel strain measured by NBD is ~ -0.90%, which is lower than the TCAD simulation. Differences between experimental results and simulation are also discussed.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::69b083cf8a510e98ae15e0b2270acb62 https://doi.org/10.1149/1.2986811 Zobrazit plný text záznamu