Tip-geometry enhanced cooling of field emission from semiconductor cathodes
| Autor: | Moon S. Chung, B.-G. Yoon, Jin Y. Choi |
|---|---|
| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Silicon business.industry Solid-state chemistry.chemical_element 02 engineering and technology Radius 021001 nanoscience & nanotechnology 01 natural sciences Cathode law.invention Field electron emission Semiconductor chemistry law 0103 physical sciences Cooling power Atomic physics 0210 nano-technology business Energy exchange |
| Zdroj: | 2016 29th International Vacuum Nanoelectronics Conference (IVNC). |
| Popis: | The tip-geometry effect of the Nottingham effect was theoretically investigated for use as a practical solid state cooler. A vacuum potential was first obtained for a spherical tip of an n-type semiconductor cathode. This made it possible to calculate the energy exchange Δe and the cooling power density Γ as a function of the emission configuration. When an atomic-size silicon tip was taken, a meaningful cooling was obtained at the bias V as small as several volts. At V=6.8 volts, a sharp tip of the radius R=0.5 nm yielded the maximum Γ= 1941 and 6148 watts/cm2 at temperature T= 600 and 900 K, respectively. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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