Spatial variation of photoluminescence and related defects in InGaN/GaN quantum wells

Autor:	Hyo-Jong Lee, E.-K. Suh, M. G. Cheong, Mun Seok Jeong, Jeffrey O. White, C. S. Kim, Yongkwan Kim, Chang-Hee Hong
Rok vydání:	2001
Předmět:	Materials science Photoluminescence Physics and Astronomy (miscellaneous) business.industry Chemical vapor deposition law.invention Optical microscope law Transmission electron microscopy Optoelectronics Near-field scanning optical microscope Dislocation Luminescence business Quantum well
Zdroj:	Applied Physics Letters. 79:3440-3442
ISSN:	1077-3118 0003-6951
DOI:	10.1063/1.1420489
Popis:	Spatially and spectrally resolved photoluminescence of InGaN/GaN quantum wells grown by metalorganic chemical vapor deposition is studied with near-field scanning optical microscopy (NSOM) and transmission electron microscopy (TEM). High-spatial-resolution NSOM images show bright blue quantum well emission around V defects and yellow emission inside the defects. TEM data suggest that the spatial distribution of blue luminescence is partly due to dislocation gettering by V defects. The yellow emission is attributed to the Ga vacancy-impurity complexes trapped inside V defects.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::69abc65a28c435ce0b2a7151bf16b985 https://doi.org/10.1063/1.1420489 Zobrazit plný text záznamu