Progress in GaAs metamorphic HEMT technology for microwave applications
| Autor: | Alice Vera, J. Fisher, K.H.G. Duh, P.M. Smith, Kenneth K. Chu, Robert J. Lender, L. Gunter, K. Nichols, D. Dugas, Dong Xu, L. Mt. Pleasant, David E. Meharry |
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| Rok vydání: | 2003 |
| Předmět: |
Engineering
business.industry Amplifier Electrical engineering High-electron-mobility transistor Engineering physics Gallium arsenide Design for manufacturability Microwave applications chemistry.chemical_compound Reliability (semiconductor) chemistry business Monolithic microwave integrated circuit |
| Zdroj: | 25th Annual Technical Digest 2003. IEEE Gallium Arsenide Integrated Circuit (GaAs IC) Symposium, 2003.. |
| Popis: | This paper reviews recent progress in the development of GaAs metamorphic HEMT (MHEMT) technology for microwave applications. Commercialization has begun, while efforts to further improve performance, manufacturability and reliability continue. We also report the first multi-watt MHEMT MMIC power amplifiers, demonstrating up to 3.2W output power and record power-added efficiency (PAE) at Ka-band. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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