Electrochemical Characterization of CuSCN Hole-Extracting Thin Films for Perovskite Photovoltaics
| Autor: | Shaik M. Zakeeruddin, M. Ibrahim Dar, Pavel Hubík, Ladislav Kavan, Neha Arora, Zuzana Vlčková Živcová, Michael Grätzel |
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| Rok vydání: | 2019 |
| Předmět: |
Materials science
Analytical chemistry Energy Engineering and Power Technology Perovskite solar cell 02 engineering and technology Substrate (electronics) 010402 general chemistry 01 natural sciences 7. Clean energy law.invention symbols.namesake law Materials Chemistry Electrochemistry Chemical Engineering (miscellaneous) Electrical and Electronic Engineering Thin film Perovskite (structure) Graphene 021001 nanoscience & nanotechnology 0104 chemical sciences Dielectric spectroscopy symbols 0210 nano-technology Raman spectroscopy Electrochemical window |
| Zdroj: | ACS Applied Energy Materials. 2:4264-4273 |
| ISSN: | 2574-0962 |
| DOI: | 10.1021/acsaem.9b00496 |
| Popis: | CuSCN thin films (optimized previously for perovskite photovoltaics) are deposited on glass, F:SnO2 (FTO), Au, glass-like carbon (GC), and reduced graphene oxide (rGO). They exhibit capacitive charging in an electrochemical window from ca. −0.3 to 0.2 V vs Ag/AgCl. Outside this window, CuSCN film is prone to chemical and structural changes. Anodic breakdown (at ca. 0.5 V) causes restructuring into submicrometer particles and denuding of the substrate. The natural p-doping is demonstrated by both the Hall effect and Mott–Schottky plots from electrochemical impedance. The corresponding flatband potentials (in V vs Ag/AgCl) varied with the substrate type as follows: 0.12 V (CuSCN@FTO), 0.08 V (CuSCN@Au), −0.02 V (CuSCN@GC), and 0.00 V (CuSCN@rGO). The acceptor concentrations determined from electrochemical impedance spectroscopy are by orders of magnitude larger than those from electrical conductivity and the Hall effect, the latter being regarded correct. Raman spectra confirm that thiocyanate is the domina... |
| Databáze: | OpenAIRE |
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