Impact of Heavy-Ion Range on Single-Event Effects in Silicon Carbide Power Junction Barrier Schottky Diodes

Autor:	Arijit Sengupta, Dennis R. Ball, Arthur F. Witulski, En Xia Zhang, Ronald D. Schrimpf, Kenneth F. Galloway, Robert A. Reed, Michael L. Alles, Michael W. McCurdy, Andrew L. Sternberg, Robert A. Johnson, Mick E. Howell, Jason M. Osheroff, John M. Hutson
Rok vydání:	2023
Předmět:	Nuclear and High Energy Physics Nuclear Energy and Engineering Electrical and Electronic Engineering
Zdroj:	IEEE Transactions on Nuclear Science. 70:394-400
ISSN:	1558-1578 0018-9499
DOI:	10.1109/tns.2023.3242223
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::698ba8051a5c0ee4ab9797b0b109e3f5 https://doi.org/10.1109/tns.2023.3242223 Zobrazit plný text záznamu