Influence of SiH4 process step on physical and electrical properties of advanced copper interconnects
| Autor: | J.F. Guillaumond, Lucile Arnaud, Vincent Arnal, Roland Pantel, Joaquim Torres, P. Dumont-Girard, S. Chhun, L.G. Gosset, N. Casanova, X. Federspiel |
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| Rok vydání: | 2004 |
| Předmět: |
Materials science
business.industry Tantalum chemistry.chemical_element Chemical vapor deposition Dielectric Condensed Matter Physics Electromigration Copper Silane Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry.chemical_compound chemistry Tantalum nitride Plasma-enhanced chemical vapor deposition Optoelectronics Electrical and Electronic Engineering business |
| Zdroj: | Microelectronic Engineering. 76:106-112 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2004.07.022 |
| Popis: | Self-aligned barriers on copper are widely investigated as a promising solution to replace standard PECVD dielectric barriers for the 65 nm technology node and beyond. As an alternative to electroless or selective CVD deposition, CuSiN barriers, based on the controlled modification of copper surface using a sequential exposure to SiH4 flow and NH3 plasma has been proposed. This paper focuses on the key role played by SiH4 flow on the physical and electrical barrier characteristics and more particularly on the existing relation between silane flow and Ta atoms from the TaN/Ta metal barrier. Non-regular defects observed after electromigration tests were not only attributed to intentionally modified copper surface but also to the presence of Ta atoms that diffused through copper lines during the tests. |
| Databáze: | OpenAIRE |
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