DMILL (Durci Mixte sur Isolant Logico-Linéaire) A mixed analog-digital radiation hard technology for high energy physics electronics
| Autor: | Jl. Martin, Jl. Leray, J. Pontcharra, P. Baron, P A. Delpierre, J.L. Gautier, C. Terrier, O. Flament, R. Potheau, M. Dentan, Michel Bruel, Jm. Brice, N. Fourches, P. Borgeaud, G. Borel, E. Beuville, J. Montarron, Mc. Habrard, R. Truche, E. Delevoye, M. Rouger |
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| Rok vydání: | 1993 |
| Předmět: |
Nuclear and High Energy Physics
Particle physics Materials science Silicon business.industry Bipolar junction transistor chemistry.chemical_element Hardware_PERFORMANCEANDRELIABILITY Radiation Bicmos technology Atomic and Molecular Physics and Optics Soi substrate Low noise chemistry CMOS Hardware_INTEGRATEDCIRCUITS Optoelectronics Electronics business |
| Zdroj: | Nuclear Physics B - Proceedings Supplements. 32:530-534 |
| ISSN: | 0920-5632 |
| Popis: | A new rad-hard technology suitable for high energy physics electronics is currently under development. This technology uses a SOI substrate with a thick silicon film. It includes CMOS, CJFET and complementary vertical bipolar transistors with a potential multi-Mrad hardness for all these devices. These devices enable the design of both analog and digital functions. CMOS together with bipolar transistors will constitute a BiCMOS technology which will be useful to build high speed architectures. JFETs, which have an intrinsically high hardness behaviour and low noise, should allow the design of very radiation-hard low-noise front-end electronics and are also good candidates for cryogenic applications. |
| Databáze: | OpenAIRE |
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