Low Temperature Transport and Magnetic Properties of SmB6

Autor:	V. Pavlík, Thomas Herrmannsdörfer, Y. Paderno, E.S. Konovalova, Karol Flachbart, Slavomír Gabáni
Rok vydání:	2000
Předmět:	Semiconductor Materials science Valence (chemistry) Condensed matter physics business.industry Band gap Electrical resistivity and conductivity Impurity Semiconductor materials General Physics and Astronomy business Magnetic susceptibility Ion
Zdroj:	Acta Physica Polonica A. 97:419-422
ISSN:	1898-794X 0587-4246
DOI:	10.12693/aphyspola.97.419
Popis:	We present results of transport and magnetic properties of three single- -crystalline samples of the intermediate valence small-gap semiconductor SmB6 at low temperatures. The received resistivity dependences of the sam- ples below 0.5 K exhibit an activated behavior with an energy gap of a few mK. The temperature dependences of the magnetic susceptibility show an increase below 15 K which can be accounted for by impurities, by bare Sm3+ ions or by a small amount of in-gap magnetic 4f 5 5d 1 states.
Databáze:	OpenAIRE
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