Microstructural properties of Ni-silicide films formed on epitaxially grown strained Si:P layer
| Autor: | Choon Hwan Kim, Hyoungsub Kim, Seongheum Choi, Yunseok Kim, Eunjung Ko, Jinyong Kim, Minhyeong Lee, Sungkil Cho, Dae Hong Ko, Juyun Choi, Il Cheol Rho |
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| Rok vydání: | 2016 |
| Předmět: |
010302 applied physics
Materials science Annealing (metallurgy) 02 engineering and technology 021001 nanoscience & nanotechnology Condensed Matter Physics Epitaxy Microstructure 01 natural sciences Atomic and Molecular Physics and Optics Surfaces Coatings and Films Electronic Optical and Magnetic Materials Strain energy chemistry.chemical_compound chemistry 0103 physical sciences Strain effect Silicide Electrical and Electronic Engineering Composite material 0210 nano-technology |
| Zdroj: | Microelectronic Engineering. 165:1-5 |
| ISSN: | 0167-9317 |
| DOI: | 10.1016/j.mee.2016.08.003 |
| Popis: | As a future-generation source/drain contact structure, NiSi films were formed on a strained and epitaxial Si:P layer (P concentration of ~ 1.9 at.%), and their unique microstructural properties were characterized as a function of the annealing temperature (400–800 °C). Unlike the NiSi film formed on Si, those formed on the strained Si:P consisted of many abnormally large grains with a rather uniform thickness and flat-bottom interface, most likely because of the strain effect caused by the underlying Si:P layer. The strain energy built at the NiSi/Si:P interface is believed to have significantly affected the microstructure and morphology of the subsequently grown NiSi film, which eventually led to retardation of thermal agglomeration. |
| Databáze: | OpenAIRE |
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