Trench-Structured High-Current-Driving Aluminum-Doped Indium–Tin–Zinc Oxide Semiconductor Thin-Film Transistor

Autor:	Do Hyung Kim, Kwang-Heum Lee, Seung Hee Lee, Junsung Kim, Junghoon Yang, Jingyu Kim, Seong-In Cho, Kwang Hwan Ji, Chi-Sun Hwang, Sang-Hee Ko Park
Rok vydání:	2022
Předmět:	Electrical and Electronic Engineering Electronic Optical and Magnetic Materials
Zdroj:	IEEE Electron Device Letters. 43:1677-1680
ISSN:	1558-0563 0741-3106
DOI:	10.1109/led.2022.3201072
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::694ba51344a408239e198604565c26d4 https://doi.org/10.1109/led.2022.3201072 Zobrazit plný text záznamu