Sol–Gel Deposited Double Layer TiO2 and Al2O3 Anti-Reflection Coating for Silicon Solar Cell
| Autor: | Jin-Su Jung, M. Shaheer Akhtar, O-Bong Yang, Azmira Jannat |
|---|---|
| Rok vydání: | 2018 |
| Předmět: |
010302 applied physics
Spin coating Materials science Equivalent series resistance Open-circuit voltage Energy conversion efficiency Biomedical Engineering Analytical chemistry Bioengineering 02 engineering and technology General Chemistry engineering.material 021001 nanoscience & nanotechnology Condensed Matter Physics 01 natural sciences Coating 0103 physical sciences engineering General Materials Science Wafer 0210 nano-technology Short circuit Layer (electronics) |
| Zdroj: | Journal of Nanoscience and Nanotechnology. 18:1274-1278 |
| ISSN: | 1533-4880 |
| DOI: | 10.1166/jnn.2018.14928 |
| Popis: | In this work, the deposition of double layer ARC on p-type Si solar cells was carried out by simple spin coating using sol-gel derived Al2O3 and TiO2 precursors for the fabrication of crystalline Si solar cells. The first ARC layer was created by freshly prepared sol-gel derived Al2O3 precursor using spin coating technique and then second ARC layer of TiO2 was deposited with sol-gel derived TiO2 precursor, which was finally annealed at 400 °C. The double layer Al2O3/TiO2 ARC on Si wafer exhibited the low average reflectance of 4.74% in the wavelength range of 400 and 1000 nm. The fabricated solar cells based on double TiO2/Al2O3 ARC attained the conversion efficiency of ~13.95% with short circuit current (JSC) of 35.27 mA/cm2, open circuit voltage (VOC) of 593.35 mV and fill factor (FF) of 66.67%. Moreover, the fabricated solar cells presented relatively low series resistance (Rs) as compared to single layer ARCs, resulting in the high VOC and FF. |
| Databáze: | OpenAIRE |
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