Improved I-V Characteristics of Poly-Si TFTs with Novel Dual-Buffer Drain Structure

Autor: Chyi-Hsiang Chern, Ching-Fa Yeh
Rok vydání: 1993
Předmět:
Zdroj: Extended Abstracts of the 1993 International Conference on Solid State Devices and Materials.
DOI: 10.7567/ssdm.1993.pb-2-6
Databáze: OpenAIRE