| Popis: |
For the hydrogen atoms adsorbed on a Si (1 0 0) surface, the processes of direct recoil by incident ions and the surface-recoil process (surface scattering of the direct recoils) are simultaneously observed at relatively low incident ion energies below 2000 eV using a He ion beam. From computer simulations, the surface-recoil processes of hydrogen atom is found to be sensitive to the bonding parameters of hydrogen atom on the surface. Comparing the experimental results with computer simulation, we discuss the surface-recoil processes of hydrogen on Si (1 0 0)-2 × 1:H and Si (1 0 0)-1 × 1:2H surfaces, and suggest the bond angle of hydrogen on both surfaces to be 110∘ and 125∘, respectively. |
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