Resistivity of copper interconnects beyond the 7 nm node

Autor:	M. Guillorn, Kenneth P. Rodbell, Christian Lavoie, A. Pyzyna, Hiroyuki Miyazoe, Eric A. Joseph, Hsinyu Tsai, D. Klaus, C. Witt, Markus Brink, Robert L. Bruce, Lynne Gignac, D.-G. Park, Michael F. Lofaro, Gregory M. Fritz
Rok vydání:	2015
Předmět:	Materials science Annealing (metallurgy) business.industry Metallurgy Copper interconnect chemistry.chemical_element Conductivity Copper Grain size chemistry Electrical resistivity and conductivity Optoelectronics Grain boundary business Surface reconstruction
Zdroj:	2015 Symposium on VLSI Technology (VLSI Technology).
Popis:	The resistivity of damascene copper is measured at pitch ranging down to 40 nm and copper cross-sectional area as low as 140 nm2. Metallization by copper reflow is demonstrated at 28 nm pitch with patterning by directed self-assembly (DSA). Extremely low line-edge-roughness (LER) is attained by surface reconstruction of a single crystal silicon mask. Variation of LER is found to have no impact on resistivity. A resistivity benefit is found for wires with nearly bamboo grain structure, offering the promise of improved performance beyond the 7 nm node if grain size can be controlled.
Databáze:	OpenAIRE
Externí odkaz:	https://explore.openaire.eu/search/publication?articleId=doi_________::6925026da3f16d18db6d3fe99b9ff42b https://doi.org/10.1109/vlsit.2015.7223712 Zobrazit plný text záznamu