Studies of silicon regrowth with aluminum and aluminum alloy metallizations
| Autor: | Ronald S. Nowicki, Arthur J. Learn |
|---|---|
| Rok vydání: | 1980 |
| Předmět: |
Materials science
Silicon Metallurgy Doping Alloy Metals and Alloys Nanocrystalline silicon Nucleation chemistry.chemical_element Surfaces and Interfaces engineering.material Grain size Surfaces Coatings and Films Electronic Optical and Magnetic Materials chemistry Materials Chemistry engineering 6063 aluminium alloy Grain boundary |
| Zdroj: | Thin Solid Films. 67:385-393 |
| ISSN: | 0040-6090 |
| DOI: | 10.1016/0040-6090(80)90473-3 |
| Popis: | The rate of silicon regrowth via transport of silicon through an overlying aluminum or aluminum alloy metallization at 500°C was studied as a function of doping level and grain size of the silicon and metal alloy composition, It is shown that the regrowth rate was significantly reduced or eliminated by (1) heavy phosphorus or nitrogen doping, (2) increasing the silicon grain size by laser annealing or (3) the use of an Al-Cu alloy for metallization. Conversely, the rate was found to be greater for Al-Si in comparison with Al-Cu or aluminum. These results are consistent with a model involving a nucleation step at the silicon-metal film interface and silicon transport through the grain boundaries of both films. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
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