Shallow and deep trap levels in X-ray irradiated β-Ga2O3: Mg
| Autor: | O. Tsvetkova, L. Kostyk, V. Vasyltsiv, Anatoli I. Popov, Andriy Luchechko |
|---|---|
| Rok vydání: | 2019 |
| Předmět: |
010302 applied physics
Nuclear and High Energy Physics Materials science Photoconductivity Doping Analytical chemistry X-ray 02 engineering and technology Activation energy 021001 nanoscience & nanotechnology 01 natural sciences Ion 0103 physical sciences Irradiation 0210 nano-technology Luminescence Instrumentation Single crystal |
| Zdroj: | Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms. 441:12-17 |
| ISSN: | 0168-583X |
| DOI: | 10.1016/j.nimb.2018.12.045 |
| Popis: | The results of the investigation of thermostimulated luminescence (TSL) and photoconductivity (PC) of the X-ray irradiated undoped and Mg2+ doped β-Ga2O3 single crystals are presented. Three low-temperature peaks at 116 K, 147 K and 165 K are observed on the TSL glow curves of undoped crystals. The high-temperature TSL peaks at 354 K and 385 K are dominant in Mg2+ doped crystals. The correlation between doping with Mg2+ ions and the local energy levels of the intrinsic structural defects of β-Ga2O3, which are responsible for the TSL peaks and PC, is established. The nature of TSL peaks and the appropriate photoconductivity excitation bands are discussed. |
| Databáze: | OpenAIRE |
| Externí odkaz: |
|
Full Text from ScienceDirect