Diamond Field-Effect Transistors With V2O5-Induced Transfer Doping: Scaling to 50-nm Gate Length
| Autor: | Pankaj B. Shah, Dmitry Ruzmetov, James Weil, A. Glen Birdwell, Tony Ivanov, Khamsouk Kingkeo, Kevin G. Crawford, Mahesh R. Neupane |
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| Rok vydání: | 2020 |
| Předmět: |
010302 applied physics
Materials science business.industry Transconductance Transistor Doping Diamond engineering.material 01 natural sciences Acceptor Electronic Optical and Magnetic Materials law.invention law 0103 physical sciences engineering Optoelectronics Field-effect transistor MESFET Electrical and Electronic Engineering business Sheet resistance |
| Zdroj: | IEEE Transactions on Electron Devices. 67:2270-2275 |
| ISSN: | 1557-9646 0018-9383 |
| Popis: | Wereport on the fabrication and measurement of hydrogen-terminated diamond field-effect transistors (FETs) incorporating V2O5 as a surface acceptor material to induce transfer doping. Comparing a range of gate lengths down to 50 nm, we observe inversely scaling peak output current and transconductance. Devices exhibited a peak drain current of ~700 mA/mm and a peak transconductance of ~150 mS/mm, some of the highest reported thus far for a diamond metal semiconductor FET (MESFET). Reduced sheet resistance of the diamond surface after V2O5 deposition was verified by four probe measurement. These results show great potential for improvement of diamond FET devices through scaling of critical dimensions and adoption of robust transition metal oxides such as V2O5. |
| Databáze: | OpenAIRE |
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